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Precise Extraction of Charge Carrier Mobility for Organic TransistorsAdvanced Functional Materials, 2020, Emerging Thin‐Film Transistor Technologies and Applications, 30 (20), pp.1904508. ⟨10.1002/adfm.201904508⟩
Journal articles
hal-02998279v1
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Proceedings of the Dielectrics for Nanosystems 8: Materials Science, Processing, Reliablity and Manufacturing237th ECS Meeting, ECS Transactions, 97 (1), The Electrochemical Society, 2020, ECS Transactions, 978-1-60768-889-1
Special issue
hal-03015942v1
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Characterisation of magnetic field fluctuations at different locations within the Laboratoire Souterrain à Bas Bruit using a new SQUID prototypeInterdisciplinary Underground Science and Technology Workshop, Jun 2010, France
Conference papers
hal-00604945v1
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Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowiresJournal of Physics D: Applied Physics, 2023, 56 (12), pp.125301. ⟨10.1088/1361-6463/acbc86⟩
Journal articles
hal-04160829v1
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Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different DiametersJournal of Nano and Electronic Physics, 2020, 12, ⟨10.21272/jnep.12(3).03027⟩
Journal articles
hal-03009068v1
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Carboxylic acids as oxygen sources for the atomic layer deposition of high-k metal oxidesJournal of Physical Chemistry C, 2008, 112 (33,12754-12759)
Journal articles
hal-00391670v1
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New Characterization Methodology of Borderless Silicon Nitride Charge Kinetics Using C-V Hysteresis LoopsJournal of The Electrochemical Society, 2008, 155, H273-H279
Journal articles
hal-00391680v1
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Analysis of spatial and energy slow trap profile in HfO2/SiO2 metal-oxide-silicon devices by low frequency noise measurementsFluctuation and Noise Letters, 2008, 8, L99
Journal articles
hal-00391716v1
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Opportunities and challenges brought by 3D-sequential integration2021 IEEE International Interconnect Technology Conference (IITC), Jul 2021, Kyoto, France. pp.1-1, ⟨10.1109/IITC51362.2021.9537356⟩
Conference papers
hal-03434018v1
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Low temperature behavior of FD-SOI MOSFETs from micro- to nano-meter channel lengths14th Workshop on Low Temperature Electronics ( WOLTE 2021), Apr 2021, Virtual, Italy. ⟨10.1109/WOLTE49037.2021.9555451⟩
Conference papers
hal-03368251v1
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A 2D analytical model of threshold voltage for Pi-gate FinFET transistors.6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers
hal-00604529v1
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Sinano Institute: European Academic and Scientific Association for NanoelectronicSixth International Nanotechnology Conference on Communications and Cooperation,, May 2010, Grenoble, France
Conference papers
hal-00604562v1
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Une nouvelle méthode AFM pour caractériser les propriétés piézoélectriques de nanostructures : Application pour la récupération d'énergie à partir de nanofilsJournées Nationales sur la récupération et le stockage d'énergie pour l'alimentation des microsystèmes autonomes,, Oct 2010, Paris, France
Conference papers
hal-00604965v1
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A new fully depleted double-gate MSDRAM cell with added nonvolatile functionality.Int. Conference on Ultimate Integration on Silicon (ULIS'10), Mar 2010, Glasgow, Scotland, United States. pp.97-100
Conference papers
hal-00604650v1
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eFlash TCAD and simulationLETI Annual review 2009, "Innovative memory technologies" workshop,, Jun 2010, Grenoble, France
Conference papers
hal-00604757v1
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The Sinano Institute: European Networks and Projects in the fields of More Moore, More than Moore and Beyond-CMOS4th International Conference on Micro-Nanoelectronics, 2010, Athènes, Greece
Conference papers
hal-00604916v1
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Mobility characterization in advanced FD-SOI CMOS devices1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, 2010, Kiev, Ukraine
Conference papers
hal-00604919v1
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Selected SOI puzzles and tentative answers1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
Conference papers
hal-00604923v1
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Floating body effects for SOI memories6th International SemOI Workshop 'Nanoscaled Semiconductor-on- Insulator Materials, Sensors and Devices, Oct 2010, Kiev, Ukraine
Conference papers
hal-00604925v1
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1T-DRAM structures.Tutorial 'Nanoelectronics: a tool to face the future', 40th European Solid-State Device Research Conference (ESSDERC'10), Sep 2010, Seville, Spain
Conference papers
hal-00604942v1
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Special effects in triple gate MOSFETs fabricated on silicon-on-insulator (SOI)International Semiconductor Conference, Oct 2009, Sinaia, Romania. pp.51-56
Conference papers
hal-00603672v1
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Flat-band voltage and structural properties of Hafnium Dioxide grown by liquid-injection MOCVDECS Transactions, 2009, Vienne, Austria. pp.23-31
Conference papers
hal-00603681v1
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SOI as a platform for transition from micro to nanoECS Transactions, to be published, May 2009, San Francisco, United States
Conference papers
hal-00603700v1
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Synthesis by CVD and characterisation of nanoscale functional films and 1D structuresConference workbook, symp H2.1, Jun 2009, Strasbourg, France
Conference papers
hal-00603716v1
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-FET: electrostatics and influence of spacer thickness.5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
Conference papers
hal-00603733v1
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Silicon-based devices and materials for nanoscale CMOS and beyond-CMOS2009 Advanced Research Workshop "Future Trends in Microélectroniques: Unmapped Roads", Sardaigne, June 2009, 2009, Sardaigne, France
Conference papers
hal-00603746v1
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Vertical Transport in Spin Coated Ultra Thin Polycrystalline Pentacene Organic StacksInternational Electron Device Meeting, Dec 2009, Balitimore, United States
Conference papers
hal-00603814v1
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Characterization methods for nanodevices.Invited paper, 38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, Edinburgh, Ireland
Conference papers
hal-00392035v1
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Study of ballisticity in SOI nano-MOSFETs at very low drain bias4th EUROSOI Workshop, Cork, Ireland, Jan 2008, -, Ireland
Conference papers
hal-00392039v1
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High quality Germanium On Insulator wafers with excellent hole mobilitySolid-State Electronics, 2007, 51(9), pp.1172-1179
Journal articles
hal-00393672v1
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