Search - CMNE Access content directly

Filter your results

122 Results
Domains : phys
Image document

Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowires

Andrés Jenaro Lopez Garcia , Mireille Mouis , Thomas Jalabert , Alessandro Cresti , Gustavo Ardila
Journal of Physics D: Applied Physics, 2023, 56 (12), pp.125301. ⟨10.1088/1361-6463/acbc86⟩
Journal articles hal-04160829v1

Contact Resistance in Top Gate / Bottom Contact OTFTs.

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , G. Ghibaudo , et al.
Int. Conference on Organics Electronics, 2010, Paris, France
Conference papers hal-00604542v1

Impact of hot carrier stress on small signal MOSFET RF parameters

L. Negre , Daniel Roy , S. Boret , P. Scheer , N. Kauffmann , et al.
IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States
Conference papers hal-00604565v1

Design and Simulation of 2D Photonic Crystal Thin Film Photovoltaic, Cells

G. Gomard , E. Drouard , O. El Daif , X. Meng , C. Seassal , et al.
5th World Conference on Photovoltaic Energy Conversion, Sep 2010, Valence, Spain
Conference papers hal-00604658v1

Analysis of internal reflectivity of silicon ELO PV cells obtained by LPE

J. M. Olchowik , K. Cieslak , S. Gulkowski , A. Kaminski , A. Fave
5th World Conference on Photovoltaic Energy Conversion,, Sep 2010, Valence, Spain
Conference papers hal-00604660v1

Measurements of an RSFQ digital SQUID system

P. Febvre
S-Pulse - Savoie workshop on Experimental considerations in Superconducting Electronics, Apr 2010, Chambéry, France
Conference papers hal-00604756v1

eFlash TCAD and simulation

R. Clerc
LETI Annual review 2009, "Innovative memory technologies" workshop,, Jun 2010, Grenoble, France
Conference papers hal-00604757v1

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature and oxide charge

A. Negara , K. Cherkaoui , Hurley Hurley , C.D Young , P. Majhi , et al.
Journ. Appl. Phys., 2009, 105 (2), pp.024510:1-8
Journal articles hal-00596109v1

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

M. Cassé , F. Rochette , L. Thevenod , N. Bhouri , F. Andrieu , et al.
Journ. Appl. Phys., 2009, 105 (8), pp.084503:1-9
Journal articles hal-00596113v1

High-hole-mobility silicon germanium on insulator substrates with high crystalline quality obtained by the germanium condensation technique

L. Souriau , T. Nguyen , E. Augendre , R. Loo , V. Terzieva , et al.
Journal of The Electrochemical Society, 2009, 156 (3), pp.H208-H213
Journal articles hal-00596115v1

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu , T. Minari , T. Kazuito , R. Gwoziecki , F. Balestra , et al.
Applied Physics Letters, 2011, 98, pp.033505
Journal articles hal-00596188v1

A-RAM memory cell : concept and operation

N. Rodrriguez , F. Gamiz , S. Cristoloveanu
IEEE Electron Device Letters, 2010, 31 (9), pp.972-974
Journal articles hal-00596195v1

Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas , et al.
Japanese Journal of Applied Physics, 2010, 49, pp.04DD12
Journal articles hal-00596309v1

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

J.W. Lee , D. Jang , T. Kim , M. Mouis , G. Ghibaudo
Journ. Appl. Phys, 2010, 107, pp.044501
Journal articles hal-00596315v1

Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs

D.H. Tassis , A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis , et al.
Microelectronic Engineering, 2010, 87, pp.23534-2357
Journal articles hal-00596325v1
Image document

Imaging electron wave functions inside open quantum rings

F. Martins , B. Hackens , Marco G. Pala , Thierry Ouisse , Hermann Sellier , et al.
Physical Review Letters, 2007, 99, pp.136807. ⟨10.1103/PhysRevLett.99.136807⟩
Journal articles hal-00193197v1
Image document

Parasitic oscillation in the low-frequency noise characterization of solar cells

Chloé Wulles , Quentin Rafhay , Thibaut Desrues , Anne Kaminski , Christoforos Theodorou
Solid-State Electronics, 2022, 194, pp.108327. ⟨10.1016/j.sse.2022.108327⟩
Journal articles hal-03876783v1
Image document

Parasitic coupling in 3D equential integration: the example of a two-layer 3D pixel

Petros Sideris , Arnaud Peizerat , Perrine Batude , Gilles Sicard , Christoforos Theodorou
Technologies , 2022, 10 (2), pp.38. ⟨10.3390/technologies10020038⟩
Journal articles hal-03876789v1

Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

V. Puget , G. Bossu , P. Masson , P. Mazoyer , R. Ranica , et al.
IEEE Transactions on Electron Devices, 2010, 57 (4), pp.855-865
Journal articles hal-00596201v1

Programming efficiency and drain disturb trade-off in embedded Non Volatile Memories

A. Zaka , P. Palestri , D. Rideau , M. Iellina , E. Dornel , et al.
14th International Workshop on Computational Electronics,, Oct 2010, Pisa, Italy
Conference papers hal-00604566v1

Advanced analysis of silicon interface traps in MOSFET's with SiO2 and HfO2 as gate dielectrics

D. Bauza , O. Ghobar , N. Guenifi , S. Bayon
ECS Spring Meeting, May 2009, San Francisco, United States. pp.19-54
Conference papers hal-00603697v1

Impact de fortes contraintes mécaniques sur des nanostructures par intégration sur membranes ultra-fines

B. Bercu , L. Montès , F. Rochette , X. Xu , P. Morfouli
2ème Atelier GDR MECANO,, Apr 2010, Ecole des Mines de Paris, France
Conference papers hal-00604951v1

Extraction de la mobilité de magnétorésistance de nMOSFETs FD-SOI et sSOI courts à grille TiN/HfO2: discussion sur l'origine de sa dégradation

F. Rochette , M. Cassé , M. Mouis
Journées Transport balistique du GDR Nanoélectronique,, May 2009, Orsay, France
Conference papers hal-00604952v1

ESD robustness of FDSOI gated diode for ESD network design: thin or thick BOX?

T. Benoist , C. Fenouillet-Beranger , P. Perreau , C. Buj , P. Galy , et al.
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers hal-00604644v1

Ultrathin SOI and GeOI Materials and Transistors. Invited paper

S. Cristoloveanu
IEEE Electron Device Society Mini-Colloquium XX,, Mar 2010, Daegu, South Korea
Conference papers hal-00604758v1

Silicon-based devices and materials for nanoscale FETs Invited paper

F. Balestra
6th International SemOI Conference & 1st Ukrainian-French Seminar on SOI Materials, Devices and Circuits, Oct 2010, Kiev, Ukraine
Conference papers hal-00604767v1

New concepts for 1T-DRAMs on SOI.

S. Cristoloveanu , M. Bawedin , N. Rodriguez , K.-H. Park , A. Hubert , et al.
Workshop on Innovative Memory Technology, MINATEC Crossroads'10, Jun 2010, Grenoble, France
Conference papers hal-00604943v1

Origin of low-frequency noise in pentacene field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , J. Chroboczek , F. Balestra , et al.
Solid-State Electronics, 2010, pp.In Press, Corrected Proof, Available online 4 February 2011
Journal articles hal-00596355v1

Improved GeOI substrates for pMOSFET off-state leakage control

K. Romanjek , E. Augendre , W. van den Daele , B. Grandchamp , L. Sanchez , et al.
Microelectronic Engineering, 2009, 86 (7-9), pp.1585-1588
Journal articles hal-00596129v1

Tuning the dipole at the High-/SiO2 interface in advanced metal gate stacks.

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin , et al.
Microelectronic Engineering, 2009, 86, pp.1740-1742
Journal articles hal-00596131v1